GaAs SPDT Switch
DC - 3.0 GHz
SW-456
Features
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Functional Schematic
Positive Control Voltage
PIN 1
RF1
1000 pF
GND
RFC
1000 pF
RF2
1000 pF
V2
V1
Low Cost Plastic SC-70 (SOT-363) Package
Low Insertion Loss < 0.3 dB @ 900 MHz
Low Power Consumption < 15
碌A(chǔ)
@ +2.3 Volts
Positive or Negative 2.3 to 8 Volt Control
Description
M/A-COM鈥檚 SW-456 is a GaAs monolithic switch in a low
cost SC-70 (SOT-363) surface mount plastic package. The
SW-456 is ideally suited for applications where very low
power consumption, low insertion loss, very small size and
low cost are required. Typical application is in dual band
systems where switching between small signal components
is required such as filter banks, single-band LNA鈥檚,
converters, etc. The SW-456 can be used in applications up
to 0.25 watts in systems such as cellular, PCS, DCS1800,
GSM, CDMA, W-CDMA and other analog/digital wireless
communication systems.
The SW-456 is fabricated using a mature 0.8 micron GaAs
MESFET process. The process features full passivation for
performance and reliability.
Functional Schematic
Negative Control Voltage
PIN 1
RF1
V1
Handling Procedures
The following precautions should be observed to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are ESD sensitive
and can be damaged by static electricity. Proper ESD
techniques should be used when handling these devices.
GND
RFC
RF2
V2
Truth Table
Mode
(Control)
Positive
1
V1
V2
RFC -
RF1
Off
On
On
Off
RFC -
RF2
On
Off
Off
On
PIN Configuration
PIN
1
2
3
4
5
6
Function
RF1
GND
RF2
V2
RFC
V1
Description
RF In/Out
RF Ground
RF In/Out
V
CTRL2
RF Common
V
CTRL1
0 鹵 0.2 V
+2.3 to +8 V
+2.3 to +8 V
0 鹵 0.2 V
-2.3 V to 鈥? V
0 鹵 0.2 V
Negative
2
0 鹵 0.2 V
-2.3 V to -8 V
1. External DC blocking capacitors are required on all RF
ports. 1000 pF capacitors used for positive control voltage.
For higher frequency operation, smaller value DC blocking
capacitors can be substituted.
2. If negative control is used, DC blocking capacitors are not
required on RF ports.
1
2
3
4
