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SUR50N025-05P-T4-E3 Datasheet

  • SUR50N025-05P-T4-E3

  • N-Channel 25-V (D-S) MOSFET

  • 97.04KB

  • 6頁(yè)

  • VISHAY   VISHAY

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SUR50N025-05P
New Product
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
25
FEATURES
I
D
(A)
a, e
89
80
r
DS(on)
(W)
0.0052 @ V
GS
= 10 V
0.0076 @ V
GS
= 4.5 V
Q
g
(Typ)
30 nC
D
TrenchFETr Power MOSFET
D
100% R
g
Tested
D
RoHS Compliant
APPLICATIONS
D
DC/DC Conversion, Low-Side
鈭?/div>
Desktop PC
鈭?/div>
Notebook PC
TO-252
Reverse Lead DPAK
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUR50N025-05P鈥擡3 (Lead (Pb)-Free)
SUR50N025-05P-T4鈥擡3 (Lead (Pb)-Free, alternate tape orientation)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25_C
Continuous Drain Current (T
J
= 175_C)
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Pulsed Drain Current
Continuous Source Drain Diode Current
Source-Drain
Avalanche Current Pulse
Single Pulse Avalanche Energy
T
C
= 25_C
T
A
= 25_C
L = 0 1 mH
0.1
T
C
= 25_C
Maximum Power Dissipation
T
C
= 70_C
T
A
= 25_C
T
A
= 70_C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
AS
E
AS
I
D
Symbol
V
DS
V
GS
Limit
25
"20
89
a, e
75
a, e
36
b, c
30
b, c
100
55
7.7
b, c
45
101
83
a
58
a
11.5
b, c
8.0
b, c
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Case
t
p
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
10
1.5
Maximum
13
1.8
Unit
_C/W
Notes:
a. Based on T
C
= 25_C.
b. Surface mounted on 1鈥?x 1鈥?FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 90
_C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73379
s-50933鈥擱ev. A, 09-May-05
www.vishay.com
1

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