SUP/SUB85N04-04
Vishay Siliconix
N-Channel 40-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
40
r
DS(on)
(W)
0.004 @ V
GS
= 10 V
I
D
(A)
85
a
TO-220AB
D
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
Ordering Information
SUP85N04-04
SUP85N04-04鈥擡3 (Lead (Pb)-Free)
S
Ordering Information
SUB85N04-04
SUB85N04-04鈥擡3 (Lead (Pb)-Free)
N-Channel MOSFET
Top View
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Maximum Power Dissipation
b
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
d
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
40
20
85
a
85
a
240
70
211
250
c
3.75
鈭?5
to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
d
Junction-to-Ambient
J
ti t A bi t
Junction-to-Case
Notes
a. Package limited.
b. Duty cycle
v
1%.
c. See SOA curve for voltage derating.
d. When mounted on 1鈥?square PCB (FR-4 material).
Document Number: 71125
S-41261鈥擱ev. C, 05-Jul-04
www.vishay.com
Free Air (TO-220AB)
R
thJA
R
thJC
Symbol
Limit
40
62.5
0.6
Unit
_C/W
C/W
1