SUP/SUB60N06-18
Vishay Siliconix
N-Channel 60-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
60
r
DS(on)
(W)
0.018
I
D
(A)
60
TO-220AB
D
TO-263
DRAIN connected to TAB
G
G D S
Top View
SUP60N06-18
G
D S
S
Top View
SUB60N06-18
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
a
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
60
"20
60
39
Unit
V
A
120
60
180
120
b
W
3.7
鈥?5 to 175
_C
mJ
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
PCB Mount (TO-263)
c
Junction-to-Ambient
Junction to Ambient
Free Air (TO-220AB)
Junction-to-Case
Notes:
a. Duty cycle
v
1%.
b. See SOA curve for voltage derating.
c. When mounted on 1鈥?square PCB (FR-4 material).
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70290
S鈥?7253鈥擱ev. D, 24-Feb-98
www.vishay.com
S
FaxBack 408-970-5600
R
thJA
hJA
R
thJC
Symbol
Limit
40
62.5
1.25
Unit
_C/W
2-1