SUD50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
b
63
b
52
b
r
DS(on)
(W)
0.0095 @ V
GS
= 10 V
0.014 @ V
GS
= 4.5 V
D
TrenchFETr Power MOSFET
D
Optimized for High- or Low-Side
D
100% R
g
Tested
APPLICATIONS
D
DC/DC Converters
D
Synchronous Rectifiers
D
TO-252
Drain Connected to Tab
G
D
S
G
Top View
S
Ordering Information: SUD50N03-09P
SUD50N03-09P鈥擡3 (Lead Free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
a
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
L = 0 1 mH
0.1
T
C
= 25_C
T
A
= 25_C
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
"20
63
b
44.5
b
50
10
35
61
65.2
7.5
a
鈭?5
to 175
Unit
V
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t
v
10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
Document Number: 71856
S-40573鈥擱ev. E, 29-Mar-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
16
40
1.8
Maximum
20
50
2.3
Unit
_C/W
C/W
1