SUD25N15-52
Vishay Siliconix
N-Channel 150-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
150
FEATURES
I
D
(A)
25
23
r
DS(on)
(W)
0.052 @ V
GS
= 10 V
0.060 @ V
GS
= 6 V
D
D
D
D
TrenchFETr Power MOSFET
175_C Junction Temperature
PWM Optimized
100% R
g
Tested
APPLICATIONS
D
Primary Side Switch
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD25N15-52
SUD25N15-52鈥擡3 (Lead Free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175_C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle
v
1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25_C
T
A
= 25_C
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AR
E
AR
P
D
T
J
, T
stg
Limit
150
"20
25
14.5
50
25
25
31
136
b
3
a
鈭?5
to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
J
ti t A bi t
Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1鈥?x1鈥?FR4 Board.
b. See SOA curve for voltage derating.
Document Number: 71768
S-40272鈥擱ev. C, 23-Feb-04
www.vishay.com
t
v
10 sec
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
C/W
1