廬
STTH102
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
Tj (max)
V
F
(max)
trr (max)
FEATURES AND BENEFITS
s
s
1A
200 V
175 擄C
0.78 V
20 ns
s
s
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DO-41
STTH102
DESCRIPTION
The STTH102, which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(AV)
I
FSM
T
stg
Tj
Parameter
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Tl = 130擄C
tp = 10 ms
未
=0.5
Sinusoidal
Value
200
1
50
- 65 + 175
+ 175
Unit
V
A
A
擄C
擄C
THERMAL PARAMETERS
Symbol
R
th (j-a)
Junction to ambient*
Parameter
Maximum
50
Unit
擄C/W
* On infinite heatsink with 10mm length.
August 2001 - Ed: 2A
1/5