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ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(typ)
V
F
(max)
FEATURES AND BENEFITS
ULTRA-FAST, SOFT RECOVERY.
VERY LOW OVERALL POWER LOSSES IN
BOTH THE DIODE AND THE COMPANION
TRANSISTOR.
HIGH FREQUENCY AND/OR HIGH PULSED
CURRENT OPERATION.
HIGH REVERSE VOLTAGE CAPABILITY
INSULATED PACKAGE : DOP3I
Electrical insulation : 2500V
RMS
Capacitance : 12pF
DESCRIPTION
TURBOSWITCH 1200V drastically cuts losses in
all high voltage operationswhich require extremely
fast, soft and noise-free power diodes. Due to their
optimized switching performances they also highly
decrease power losses in any associated
switching IGBT or MOSFET in all freewheel mode
operations.
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F(RMS)
I
FRM
I
FSM
T
stg
T
j
Parameter
Repetitive peak reverse voltage
RMS forward current
Repetitive peak forward current
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
tp = 5
碌s
F = 5kHz square
tp = 10ms sinusoidal
Value
1200
50
220
150
- 65 to + 150
150
Unit
V
A
A
A
擄C
擄C
They are particularly suitable in motor control
circuitries, or in the primary of SMPS as snubber,
clamping or demagnetizing diodes. They are also
suitable for secondary of SMPS as high voltage
rectifier diodes.
A
A
K
15A
1200V
55ns
1.9V
K
K
SOD93
STTA1512P
Isolated
DOP3I
STTA1512PI
TURBOSWITCH is a trademark of STMicroelectronics
November 1999 - Ed: 5A
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