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STRH50P6FSY3 Datasheet

  • STRH50P6FSY3

  • P-channel 60V - 0.047ヘ - TO-254AA Rad-hard low gate charge ...

  • 13頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STRH50P6FSY1
STRH50P6FSY3
P-channel 60V - 0.047鈩?- TO-254AA
Rad-hard low gate charge STripFET鈩?Power MOSFET
Features
Type
STRH50P6FSY1
STRH50P6FSY3
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V
DSS
60 V
60 V
Low R
DS(on)
Fast switching
Single event effect (SEE) hardned
Low total gate charge
Light weight
100% avalanche tested
Application oriented characterization
Hermetically sealed
Heavy ion SOA
100 kRad TID
SEL & SEGR with 34Mev/cm虜/mg LET ions
Figure 1.
Internal schematic diagram
TO-254AA
1
3
2
Applications
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Satellite
High reliability
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to sustain high TID
and provide immunity to heavy ion effects. It is
therefore suitable as power switch in mainly high-
efficiency DC-DC converters. It is also intended
for any application with low gate charge drive
requirements.
Table 1.
Device summary
Order codes
STRH50P6FSY1
(1)
STRH50P6FSY3
(2)
1. Mil temp range
2. Space flights parts (full ESCC flow screening)
Marking
RH50P6FSY1
RH50P6FSY3
Package
TO-254AA
TO-254AA
Packaging
Individual strip pack
Individual strip pack
November 2007
Rev 3
1/13
www.st.com
13

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