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STRH40N25FSY3

N-channel 250V - 0.084鈩?- TO-254AA

Rad-hard low gate charge STripFET鈩?Power MOSFET

PRELIMINARY DATA

Features

Type

STRH40N25FSY3

鈻?/div>

V

DSS

250V

Low R

DS(on)

Fast switching

Single event effect (SEE) hardened

Low total gate charge

Light weight

100% avalanche tested

Application oriented characterization

Hermetically sealed

Heavy ion SOA

100kRad TID

SEL & SEGR with 34Mev/cm虜/mg LET ions

TO-254AA

Internal schematic diagram

Description

This Power MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to improve immunity to

space effect. It is therefore suitable as power

switch in mainly high-efficiency DC-DC converters

and Motor Control applications. It is also intended

for any application with low gate charge drive

requirements.

Applications

鈻?/div>

Satellite

High reliability applications

Order codes

Part number

STRH40N25FSY1

(1)

STRH40N25FSY3

(2)

1. Mil temp range

2. Space flights parts (full ESA flow screening)

Marking

RH40N25FSY1

RH40N25FSY3

Package

TO-254AA

Packaging

Individual strip pack

March 2007

Rev 2

1/13

www.st.com

13

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

型號

版本

描述

廠商

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