STP8NC70Z Datasheet

IC型號：
STP8NC70Z
PDF描述：
N-CHANNEL 700V - 0.90ohm - 6.8A TO-220/FP/D2PAK/I2PAK Zener-...
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STP8NC70Z - STP8NC70ZFP

STB8NC70Z - STB8NC70Z-1

N-CHANNEL 700V - 0.90鈩?- 6.8A TO-220/FP/D

PAK/I

PAK

Zener-Protected PowerMESH鈩II MOSFET

TYPE

STP8NC70Z/FP

STB8NC70Z/-1

DSS

700V

DS(on)

< 1.2

鈩?/div>

< 1.2

鈩?/div>

6.8 A

TYPICAL R

(on) = 0.9

鈩?/div>

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

PAK

TO-220

TO-220FP

DESCRIPTION

The third generation of MESH OVERLAY鈩?Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

PAK

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

(

)

TOT

ESD(G-S)

dv/dt(1)

ISO

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuous) at T

= 25擄C

Drain Current (continuous) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Gate-source Current (DC)

Gate source ESD(HBM-C=100pF, R=15K鈩?

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

鈥?5 to 150

150

6.8

4.3

135

1.08

鹵50

2000

Value

STP(B)8NC70Z(-1)

700

鹵 25

6.8(*)

4.3(*)

27(*)

0.32

STP8NC70ZFP

W/擄C

V/ns

擄C

Unit

(鈥?Pulse width limited by safe operating area

December 2002

(1)I

鈮?.8A,

di/dt

鈮?00A/碌s,

鈮?/div>

(BR)DSS

, T

鈮?/div>

JMAX

(*)Pulse width Limited by maximum temperature allowed

1/13

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