(on) = 1.3鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D
2
PAK
3
1
2
TO-220FP
12
3
I
2
PAK
(Tabless TO-220)
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsur-
passed on-resistance per unit area while integrating
back-to-back Zener diodes between gate and
source. Such arrangement gives extra ESD capabil-
ity with higher ruggedness performance as request-
ed by a large variety of single-switch applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ORDERING INFORMATION
SALES TYPE
STP7NC80Z
STP7NC80ZFP
STB7NC80ZT4
STB7NC80Z-1
MARKING
P7NC80Z
P7NC80ZFP
B7NC80Z
B7NC80Z
PACKAGE
TO-220
TO-220FP
D
2
PAK
I
2
PAK
PACKAGING
TUBE
TUBE
TAPE & REEL
TUBE
May 2003
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