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STP7NC70Z Datasheet

  • STP7NC70Z

  • N-CHANNEL 700V - 1.1ohm - 6A TO-220/FP/D2PAK/I2PAK Zener-Pro...

  • 13頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP7NC70Z - STP7NC70ZFP
STB7NC70Z - STB7NC70Z-1
N-CHANNEL 700V - 1.1鈩?- 6A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STP7NC70Z/FP
STB7NC70Z/-1
s
s
V
DSS
700V
700V
R
DS(on)
< 1.38鈩?/div>
< 1.38鈩?/div>
I
D
6A
6A
1
3
s
s
s
TYPICAL R
DS
(on) = 1.1鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D
2
PAK
1
3
2
TO-220
TO-220FP
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
May 2003
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
6
I PAK
(Tabless TO-220)
2
12
3
Value
STP(B)7NC70Z(-1)
700
700
鹵 25
6(*)
3.7(*)
24
40
0.32
鹵50
3
3
2000
鈥?5 to 150
150
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2)
.
Limited only by maximum temperature allowed
Unit
STP7NC70ZFP
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
V
擄C
擄C
1/13
3.7
24
125
1
(鈥?Pulse width limited by safe operating area

STP7NC70Z 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 700 V

  • +/- 25 V

  • 6 A

  • 4 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220

  • 10 ns

  • 7 S

  • - 65 C

  • 125 W

  • 8 ns

  • 1000

STP7NC70Z相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 7A I(D) | ...
    ETC
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH ...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 300V - 0.75ohm - 7A - TO-220/TO-220FP PowerMESH ...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 800V - 1.2ohm - 6.5A - TO-220/TO-220FP PowerMESH...
    STMICROELECTRON...
  • 英文版
    N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMESH⑩II MOSFET
    STMICROELECTRONICS
  • 英文版
    N-CHANNEL 400V - 0.75ohm - 6A TO-220 PowerMESH⑩II MOSFET
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOS...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 100V - 0.3 ohm - 7A - TO-220 STripFET POWER MOS...
    STMICROELECTRON...
  • 英文版
    N - CHANNEL 75V - 0.01ohm - 75A TO-220/TO-220FP STripFET POW...
    STMICROELECTRONICS
  • 英文版
    N - CHANNEL 75V - 0.01ohm - 75A TO-220/TO-220FP STripFET POW...
    STMICROELECTRON...
  • 英文版
    N-channel 200V - 0.028ヘ - 75A - D2PAK - TO-220 - TO-247 Low...
    STMICROELECTRONICS

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