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STP6NC80ZFP Datasheet

  • STP6NC80ZFP

  • N-CHANNEL 800V - 1.5ohm - 5.4A TO-220/FP/DPAK/IPAK Zener...

  • 512.43KB

  • 13頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP6NC80Z - STP6NC80ZFP
STB6NC80Z - STB6NC80Z-1
N-CHANNEL 800V - 1.5鈩?- 5.4A TO-220/FP/D虜PAK/I虜PAK
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STP6NC80Z/FP
STB6NC80Z/-1
s
s
V
DSS
800V
800V
R
DS(on)
< 1.8
鈩?/div>
< 1.8
鈩?/div>
I
D
5.4 A
5.4 A
1
3
s
s
s
TYPICAL R
DS
(on) = 1.5
鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D虜PAK
TO-220
3
1
2
TO-220FP
12
3
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I虜PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current (
q
)
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
鈥?5 to 150
150
5.4
3.4
21
125
1
鹵50
3
3
2000
Value
STP(B)6NC80Z(-1)
800
800
鹵 25
5.4(*)
3.4(*)
21(*)
40
0.32
STP6NC80ZFP
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
V
擄C
擄C
Unit
(鈥?Pulse width limited by safe operating area
December 2002
(1)I
SD
鈮?.4A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
1/13

STP6NC80ZFP 產(chǎn)品屬性

  • STMicroelectronics

  • N-Channel

  • 800 V

  • +/- 25 V

  • 5.4 A

  • 1.5 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220FP

  • Tube

  • 13 ns

  • 7 S

  • - 65 C

  • 40 W

  • 10 ns

  • 50

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