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STP6N25FI Datasheet

  • STP6N25FI

  • N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

  • 10頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP6N25
STP6N25FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
PRELIMINARY DATA
TYPE
STP6N25
STP6N25FI
s
s
s
s
s
V
DSS
250 V
250 V
R
DS( on)
< 1
鈩?/div>
< 1
鈩?/div>
I
D
6A
4A
TYPICAL R
DS(on)
= 0.7
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
APPLICATIONS
s
HIGH SPEED SWITCHING
s
UNINTERRUPTIBLE POWER SUPPLY (UPS)
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
INDUSTRIAL ACTUATORS
s
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
s
PARTICULARLY SUITABLE FOR
ELECTRONIC FLUORESCENT LAMP
BALLASTS
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP6N25
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(鈥?
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
STP6N25FI
250
250
鹵
20
6
4
24
70
0.56
錚?/div>
-65 to 150
150
4
2.6
24
35
0.28
2000
Unit
V
V
V
A
A
A
W
W/
o
C
o
o
C
C
(鈥? Pulse width limited by safe operating area
June 1993
1/10

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