STMicroelectronis unique 鈥漇ingle Feature Size鈩⑩€?/div>
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remarka-
ble manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?/div>
)
P
tot
V
ISO
dv/dt
T
s tg
T
j
May 2000
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating F actor
Insulation Withstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
o
Value
STP60NE06L-16
STP60NE06L-16FP
60
60
鹵
15
60
42
240
150
1
錚?/div>
6
-65 to 175
175
(
1
) I
SD
鈮?/div>
60 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Un it
V
V
35
24
140
45
0.3
2000
V
A
A
A
W
W /
o
C
V
V/ns
o
o
C
C
1/9
(鈥? Pulse width limited by safe operating area
STP60NE06L-16FP相關(guān)型號PDF文件下載
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