Using the latest high voltage MESH OVERLAY鈩?/div>
process, SGS-Thomson has designed an
advanced family of Power MOSFETs with
outstanding performance. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
dv/dt(
1
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
o
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating F actor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage T emperature
Max. O perating Junction Temperature
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP5NB40
STP5NB40FP
400
400
鹵
30
4.7
3
19
80
0.64
4.5
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?/div>
5A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Uni t
V
V
V
A
A
A
W
W/ C
V/ ns
V
o
C
o
C
o
3.1
2
19
35
0.28
4.5
2000
(鈥? Pulse width limited by safe operating area
October 1997
1/7
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
STP5NB40FP相關(guān)型號(hào)PDF文件下載
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型號(hào)
版本
描述
廠商
下載
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英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
ETC
-
英文版
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
ETC
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英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
ETC
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英文版
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
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英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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英文版
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TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
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英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
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英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRONICS
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