SGS-THOMSON unique 鈥漇ingle Feature Size鈥?/div>
process whereby a single body is implanted on a
strip layout structure. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
TO-220
TO220FP
INTERNAL SCHEMATIC DIAGRAM
Valu e
STP55NE06L
ST P55NE06LFP
60
60
鹵
15
o
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
t ot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25 C
Derating Factor
o
V
V
V
28
20
220
35
0.23
2000
A
A
A
W
W/ C
V
V/ns
o
o
o
55
39
220
130
0.86
錚?/div>
7
-65 to 175
175
V
ISO
dV/dt
T
stg
T
j
Insulation W ithstand Voltage (DC)
Peak Diode Recovery voltage slope
Storage Temperature
Max. O perating Junction Temperature
C
C
1/6
(鈥? Pulse width limited by safe operating area
(
1
) I
SD
鈮?/div>
55 A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
December 1997
STP55NE06LFP相關型號PDF文件下載
-
型號
版本
描述
廠商
下載
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-220AB
ETC
-
英文版
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 3A I(C) | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | TO-218AA
ETC
-
英文版
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | TO-220AB
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.6A I(D) ...
ETC
-
英文版
N-Channel enhancement mode power mos transistor
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.5A I(D) ...
ETC
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRON...
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMicro
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 53A I(D) | ...
ETC
-
英文版
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STMICROELECTRONICS
1
2
3
4
5
6
