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STP4NC60 - STP4NC60FP

STB4NC60-1

N-CHANNEL 600V - 1.8鈩?- 4.2A TO-220/TO-220FP/I

2

PAK

PowerMesh鈩I MOSFET

TYPE

STP4NC60

STP4NC60FP

STB4NC60-1

s

V

DSS

600V

R

DS(on)

< 2.2鈩?/div>

I

D

4.2A

3

1

2

TYPICAL R

DS

(on) = 1.8鈩?/div>

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-220

TO-220FP

DESCRIPTION

The PowerMESH

鈩?/div>

II is the evolution of the first

generation of MESH OVERLAY

鈩?

The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVERS

I

2

PAK

(Tabless TO-220)

12

3

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

( )

P

TOT

dv/dt(1)

V

ISO

T

stg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

C

= 25擄C

Drain Current (continuos) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

Max. Operating Junction Temperature

4.2

2.6

16.8

100

0.8

3.5

-

鈥?5 to 150

(*)Limited only by maximum Temperature allowed

Value

STP(B)4NC60(-1)

600

鹵30

4.2(*)

2.6(*)

16.8(*)

35

0.28

3.5

2500

STP4NC60FP

Unit

V

A

W

W/擄C

V/ns

V

擄C

(鈥?Pulse width limited by safe operating area

(1)I

SD

鈮?.2A,

di/dt

鈮?00A/碌s,

V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX.

April 2003

1/10

型號

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描述

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