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STP4NB80 Datasheet

  • STP4NB80

  • N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESH MOS...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STP4NB80
STP4NB80FP
N - CHANNEL 800V - 3鈩?- 4A - TO-220/TO-220FP
PowerMESH鈩?MOSFET
TYPE
STP4NB80
STP4NB80FP
s
s
s
s
s
V
DSS
800 V
800 V
R
DS(on)
3.3
鈩?/div>
3.3
鈩?/div>
I
D
4A
4A
TYPICAL R
DS(on)
= 3
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
1
2
3
1
2
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company鈥檚
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITCH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt(
1
)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP4NB80
STP4NB80FP
800
800
鹵
30
4
2.4
16
100
0.8
4.5
錚?/div>
-65 to 150
150
(
1
) I
SD
鈮?
A, di/dt
鈮?/div>
200 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, Tj
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
4(*)
2.4(*)
16
35
0.28
4.5
2500
V
C
C
(鈥? Pulse width limited by safe operating area
(*)
Limited only by maximum temperature allowed
September 2001
1/9

STP4NB80 產(chǎn)品屬性

  • 50

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • PowerMESH™

  • MOSFET N 通道，金屬氧化物

  • 標(biāo)準(zhǔn)型

  • 800V

  • 4A

  • 3.3 歐姆 @ 2A，10V

  • 5V @ 250µA

  • 29nC @ 10V

  • 920pF @ 25V

  • 100W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

  • 497-2781-5

STP4NB80相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    TRANSISTOR | BJT | NPN | 250V V(BR)CEO | TO-220AB
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 300V V(BR)CEO | TO-220AB
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  • 英文版
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    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 40A I(D) | ...
    ETC
  • 英文版
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    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) |...
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  • 英文版
    N-CHANNEL 200V - 0.038 OHM - 40A TO-220/TO-247/D2PAK LOW GAT...
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  • 英文版
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  • 英文版
    N - CHANNEL 100V - 0.027ohm - 45A - TO-220/TO-220FI POWER MO...
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  • 英文版
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  • 英文版
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    N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
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  • 英文版
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  • 英文版
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