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STP4NB50FP Datasheet

  • STP4NB50FP

  • N-CHANNEL 500V - 2.5ohm - 3.8A - TO-220/TO-220FP PowerMesh⑩...

  • 7頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP4NB50
STP4NB50FP
N-CHANNEL 500V - 2.5鈩?- 3.8A - TO-220/TO-220FP
PowerMesh鈩?MOSFET
PRELIMINARY DATA
TYPE
STP4NB50
STP4NB50FP
s
s
s
s
s
V
DSS
500 V
500 V
R
DS(on)
< 2.8
鈩?/div>
< 2.8
鈩?/div>
I
D
3.8 A
2.5 A
TYPICAL R
DS
(on) = 2.5
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
TO-220
3
1
2
3
1
2
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company鈥檚 proprieraty edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt
V
ISO
T
stg
T
j
Parameter
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value
STP4NB50
STP4NB50FP
500
500
鹵30
3.8
2.4
15.2
80
0.64
4.5
-
鈥?5 to 150
150
(1)I
SD
鈮?
A, di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
2.5
1.6
15.2
35
0.28
2500
A
A
A
W
W/擄C
V/ns
V
擄C
擄C
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
(鈥?Pulse width limited by safe operating area
April 2003
1/7

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