鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
2
3
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STP36NF06
STP36NF06FP
MARKING
STP36NF06
STP36NF06FP
PACKAGE
TO-220
TO-220FP
PACKAGING
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP36NF06
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
STP36NF06FP
60
60
鹵 20
30
21
120
70
0.47
20
200
-55 to 175
18
(*)
12
72
25
0.17
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I
SD
鈮?6A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 18 A, V
DD
= 45V
October 2003
1/9
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