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STP36N06FI Datasheet

  • STP36N06FI

  • N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP36N06
STP36N06FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
TYPE
STP36N06
STP36N06FI
s
s
s
s
s
s
s
s
V
DSS
60 V
60 V
R
DS( on)
< 0.04
鈩?/div>
< 0.04
鈩?/div>
I
D
36 A
21 A
TYPICAL R
DS(on)
= 0.03
鈩?/div>
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100
o
C
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
175
o
C OPERATING TEMPERATURE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
1
2
3
TO-220
ISOWATT220
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
REGULATORS
s
DC-DC & DC-AC CONVERTERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
STP36N06
V
D S
V
DG R
V
GS
I
D
I
D
I
D M
(鈥?
P
tot
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
o
Value
STP36N06FI
60
60
鹵
20
36
25
144
120
0.8
錚?/div>
-65 to 175
175
21
14
144
40
0.27
2000
Unit
V
V
V
A
A
A
W
W/
o
C
V
o
o
C
C
(鈥? Pulse width limited by safe operating area
December 1996
1/10

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