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STP30NF10FP Datasheet

  • STP30NF10FP

  • N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW G...

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB30NF10
STP30NF10 STP30NF10FP
N-CHANNEL 100V - 0.038
鈩?/div>
- 35A TO-220/TO-220FP/D
2
PAK
LOW GATE CHARGE STripFET鈩?II POWER MOSFET
TYPE
STB30NF10
STP30NF10
STP30NF10FP
s
s
s
s
V
DSS
100 V
100 V
100 V
R
DS(on)
<0.045
鈩?/div>
<0.045
鈩?/div>
<0.045
鈩?/div>
I
D
35 A
35 A
18 A
3
1
2
s
TYPICAL R
DS
(on) = 0.038
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
3
1
TO-220FP
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
3
1
2
TO-220
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
INTERNAL SCHEMATIC DIAGRAM
Value
STB30NF10
STP30NF10
STP30NF10FP
100
100
鹵 20
35
25
140
115
0.77
28
275
------
-55 to 175
2000
18
13
72
30
0.2
Unit
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
V
擄C
(鈥?
Pulse width limited by safe operating area.
May 2002
.
(1) I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
1/11

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