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STP30NE06LFP Datasheet

  • STP30NE06LFP

  • N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP30NE06L
STP30NE06LFP
N - CHANNEL 60V - 0.035
鈩?/div>
- 30A - TO-220/TO-220FP
STripFET鈩?POWER MOSFET
TYPE
STP30NE06L
STP30NE06LF P
s
s
s
s
V
DSS
60 V
60 V
R
DS( on )
< 0.05
鈩?/div>
< 0.05
鈩?/div>
I
D
30 A
17 A
TYPICAL R
DS(on)
= 0.035
鈩?/div>
100% AVALANCHE TESTED
LOW GATE CHARGE
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
3
1
2
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size鈩⑩€?strip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
s
DC MOTOR CONTROL
s
DC-DC & DC-AC CONVERTERS
s
SYNCHRONOUS RECTIFICATION
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
Parameter
Value
ST P30NE06L
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
V
ISO
T
s tg
T
j
March 1999
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25 C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Insulation W ithstand Voltage (DC)
Storage T emperature
Max. O perating Junct ion T emperature
o
Unit
STP30NE06L FP
60
60
鹵
20
V
V
V
17
12
68
30
0.2
2000
A
A
A
W
W/
o
C
V
o
o
30
21
120
80
0.53
錚?/div>
-65 to 175
175
C
C
1/9
(鈥? Pulse width limited by safe operating area

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