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STP22NE03L Datasheet

  • STP22NE03L

  • N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSF...

  • 5頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP22NE03L
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZE鈩?" POWER MOSFET
TYPE
STP22NE03L
s
s
s
s
s
V
DSS
30 V
R
DS(on)
< 0.05
鈩?/div>
I
D
22 A
TYPICAL R
DS(on)
= 0.034
鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
100% AVALANCHE TESTED
LOW GATE CHARGE 100
o
C
APPLICATION ORIENTED
CHARACTERIZATION
3
1
2
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size鈩?"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
s
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc. )
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
o
Value
30
30
鹵
15
22
16
88
60
0.4
6
-65 to 175
175
(
1
) I
SD
鈮?2
A, di/dt
鈮?/div>
300 A/碌s, V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
Unit
V
V
V
A
A
A
W
W/ C
V/ns
o
o
o
C
C
1/5
(鈥? Pulse width limited by safe operating area
January 1998

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