(on) = 0.16鈩?/div>
EXCEPTIONAL dv/dt CAPABILITY
APPLICATION ORIENTED
CHARACTERIZATION
TO-220
3
1
2
1
3
2
TO-220FP
DESCRIPTION
This Power MOSFET series realized with STMicro-
electronics unique STripFET process has specifical-
ly been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application. It
is also intended for any application with low gate
charge drive requirements
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
HIGH-EFFICIENCY DC-DC CONVERTERS
s
UPS AND MOTOR CONTROL
s
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt (1)
E
AS
(2)
V
ISO
T
j
T
stg
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Operating Junction Temperature
Storage Temperature
-
-55 to 175
(1) I
SD
鈮?4A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
(2) Starting T
j
= 25擄C, I
D
= 14A, V
DD
= 50V
Value
STP14NF12
120
120
鹵20
14
9
56
60
0.4
9
60
2500
8.5
6
34
25
0.17
STP14NF12FP
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
V
擄C
(
q
) Pulse width limited by safe operating area
August 2002
1/9
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