鈥?/div>
RECALL
to SRAM Initiated by Software or
Power Restore
鈥?10mA Typical I
CC
at 200ns Cycle Time
鈥?Unlimited READ, WRITE and
RECALL
Cycles
鈥?1,000,000
STORE
Cycles to EEPROM
鈥?100-Year Data Retention over Full Industrial
Temperature Range
鈥?Commercial and Industrial Temperatures
鈥?28-Pin PDIP and SOIC Packages
DESCRIPTION
The STK16C88 is a fast
SRAM
with a nonvolatile
EEPROM
element incorporated in each static mem-
ory cell. The
SRAM
can be read and written an
unlimited number of times, while independent non-
volatile data resides in
EEPROM
. Data transfers from
the
SRAM
to the
EEPROM
(the
STORE
operation) can
take place automatically on power down. An internal
capacitor guarantees the
STORE
operation regard-
less of power-down slew rate. Transfers from the
EEPROM
to the
SRAM
(the
RECALL
operation) take
place automatically on restoration of power. Initia-
tion of
STORE
and
RECALL
cycles can also be con-
trolled by entering control sequences on the
SRAM
inputs. The STK16C88 is pin-compatible with 32k x
8
SRAM
s and battery-backed
SRAM
s, allowing direct
substitution while enhancing performance. The
STK14C88, which uses an external capacitor, and
the STK15C88, which uses charge stored in system
capacitance, are alternatives for systems needing
AutoStorePlus鈩?/div>
operation.
BLOCK DIAGRAM
EEPROM ARRAY
512 x 512
V
CC
STORE/
RECALL
CONTROL
PIN CONFIGURATIONS
A
14
A
12
A
7
A
6
A
5
A
4
A
3
A
2
A
1
A
0
DQ
0
DQ
1
DQ
2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A
5
A
6
A
7
A
8
A
9
A
11
A
12
A
13
A
14
DQ
0
DQ
1
DQ
2
DQ
3
DQ
4
DQ
5
DQ
6
DQ
7
STORE
STATIC RAM
ARRAY
512 x 512
RECALL
POWER
CONTROL
INTERNAL
CAPACITOR
V
CC
W
A
13
A
8
A
9
A
11
G
A
10
E
DQ
7
DQ
6
DQ
5
DQ
4
DQ
3
ROW DECODER
28 - 600 PDIP
28 - 350 SOIC*
*see order info
INPUT BUFFERS
COLUMN I/O
COLUMN DEC
SOFTWARE
DETECT
A
0
- A
13
PIN NAMES
A
0
- A
14
W
DQ
0
- DQ
7
Address Inputs
Write Enable
Data In/Out
Chip Enable
Output Enable
Power (+ 5V)
Ground
A
0
A
1
A
2
A
3
A
4
A
10
G
E
W
E
G
V
CC
V
SS
July 1999
5-65
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