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STH10NC60FI Datasheet

  • STH10NC60FI

  • N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh...

  • 9頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STW10NC60
STH10NC60FI
N-CHANNEL 600V - 0.6鈩?- 10A - TO-247/ISOWATT218
PowerMesh鈩I MOSFET
TYPE
STW10NC60
STH10NC60FI
s
s
s
s
s
V
DSS
600 V
600 V
R
DS(on)
< 0.75
鈩?/div>
< 0.75
鈩?/div>
I
D
10 A
10 A (*)
TYPICAL R
DS
(on) = 0.6
鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
TO-247
3
3
2
1
2
1
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVER
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
dv/dt
V
ISO
T
stg
T
j
.
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
-
10
6.3
40
160
1.28
Value
STW10NC60
600
600
鹵30
10 (*)
6.3 (*)
40 (*)
60
0.48
3.5
2500
鈥?55 to 150
(1)I
SD
鈮?0A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(*) Limited only by Maximum Temperature Allowed
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
V
擄C
STH10NC60FI
(鈥?Pulse width limited by safe operating area
February 2002
1/9

STH10NC60FI相關(guān)型號PDF文件下載

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  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 12A I(D) |...
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  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-218AC
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  • 英文版
    TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 15A I(C) | TO-218AC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 15A I(C) | TO-218AC
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 15A I(C) | TO-218AC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D)...
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) |...
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 5A I(C) | TO-218AC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-218AC
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-218AC
  • 英文版
    TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 8A I(C) | TO-218AC
    ETC

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