STGB20NB32LZ
STGB20NB32LZ-1
N-CHANNEL CLAMPED 20A - D
2
PAK/I
2
PAK
INTERNALLY CLAMPED PowerMESH鈩?IGBT
TYPE
STGB20NB32LZ
STGB20NB32LZ-1
s
s
s
s
s
s
V
CES
CLAMPED
CLAMPED
V
CE(sat)
< 2.0 V
< 2.0 V
I
C
20 A
20 A
3
1
3
12
POLYSILICON GATE VOLTAGE DRIVEN
LOW THRESHOLD VOLTAGE
LOW ON-VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH VOLTAGE CLAMPING FEATURE
SURFACE-MOUNTING D虜PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
D
2
PAK
I
2
PAK
DESCRIPTION
Using the latest high voltage technology based on a
patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the
PowerMESH
鈩?/div>
IGBTs, with outstanding
performances. The built in collector-gate zener
exhibits a very precise active clamping while the
gate-emitter zener supplies an ESD protection.
APPLICATIONS
s
AUTOMOTIVE IGNITION
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
ECR
V
GE
I
C
I
C
I
CM
( )
Eas
P
tot
E
SD
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
GS
= 0)
Reverse Battery Protection
Gate-Emitter Voltage
Collector Current (continuous) at T
c
= 25擄C
Collector Current (continuous) at T
c
= 100擄C
Collector Current (pulsed)
Single Pulse Energy T
c
= 25擄C
Total Dissipation at T
c
= 25擄C
Derating Factor
ESD (Human Body Model)
Storage Temperature
Max. Operating Junction Temperature
Value
CLAMPED
20
CLAMPED
40
30
80
700
150
1
4
鈥?5 to 175
175
Unit
V
V
V
A
A
A
mJ
W
W/擄C
KV
擄C
擄C
(鈥?Pulse width limited by safe operating area
December 2002
1/11
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