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STD3PS25-1 Datasheet

  • STD3PS25-1

  • P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET

  • 447.45KB

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD3PS25 - STD3PS25-1
P-CHANNEL 250V - 2.1鈩?- 3A DPAK/IPAK
MESH OVERLAY鈩?MOSFET
TYPE
STD3PS25
STD3PS25-1
s
s
s
V
DSS
250 V
250 V
R
DS(on)
< 2.8
鈩?/div>
< 2.8
鈩?/div>
I
D
3A
3A
3
1
2
1
3
s
s
TYPICAL R
DS
(on) = 2.1鈩?/div>
100% AVALANCHE TESTED
APPLICATION ORIENTED
CHARACTERIZATION
STANDARD OUTLINE FOR EASY
AUTOMATED SURFACE MOUNT ASSEMBLY
GATE-SOURCE ZENER DIODE
DPAK
IPAK
DESCRIPTION
Using the latest high voltage MESH OVERLAY鈩?/div>
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performance. The new patented STrip layout cou-
pled with the Company鈥檚 proprietary edge termina-
tion structure, makes it suitable in coverters for
lighting applications.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
CONSUMER
s
LIGHTING
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Storage Temperature
Max. Operating Junction Temperature
Value
250
250
鹵25
3
1.9
12
45
0.36
鈥?50 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
擄C
擄C
June 2003
1/10

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