STD3NM60-1 Datasheet

IC型號：
STD3NM60-1
PDF描述：
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protecte...
文件大小：
550.58KB
PDF頁數(shù)：
12頁
芯片廠家：
STMICROELECTRONICS

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STP4NM60

STD3NM60 - STD3NM60-1

N-CHANNEL 600V - 1.3鈩?- 3A TO-220/DPAK/IPAK

Zener-Protected MDmesh鈩ower MOSFET

TYPE

STP4NM60

STD3NM60

STD3NM60-1

DSS

600 V

DS(on)

< 1.5

鈩?/div>

< 1.5

鈩?/div>

< 1.5

鈩?/div>

69 W

42 W

TYPICAL R

(on) = 1.3

鈩?/div>

HIGH dv/dt AND AVALANCHE CAPABILITIES

IMPROVED ESD CAPABILITY

LOW INPUT CAPACITANCE AND GATE

CHARGE

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

IPAK

TO-220

DPAK

DESCRIPTION

The MDmesh鈩?is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company鈥檚 PowerMESH鈩?horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company鈥檚 proprietary strip technique yields overall

dynamic performance that is significantly better than

that of similar completition鈥檚 products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh鈩?family is very suitable for increase

the power density of high voltage converters allow-

ing system miniaturization and higher efficiencies.

ORDERING INFORMATION

SALES TYPE

STP4NM60

STD3NM60T4

STD3NM60-1

MARKING

P4NM60

D3NM60

PACKAGE

TO-220

DPAK

IPAK

PACKAGING

TUBE

TAPE & REEL

TUBE

September 2002

1/12

標(biāo)準(zhǔn)包裝
75
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
MDmesh™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
600V
電流 - 連續(xù)漏極(Id) @ 25° C
3A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
1.5 歐姆 @ 1.5A，10V
Id 時的 Vgs(th)（最大）
5V @ 250µA
閘電荷(Qg) @ Vgs
14nC @ 10V
輸入電容 (Ciss) @ Vds
324pF @ 25V
功率 - 最大
42W
安裝類型
通孔
封裝/外殼
TO-251-3 長引線，IPak，TO-251AB
供應(yīng)商設(shè)備封裝
I-Pak
包裝
管件

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STD3NM60-1 Datasheet

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