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STD3NM50-1 Datasheet

  • STD3NM50-1

  • N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmes...

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD3NM50
STD3NM50-1
N-CHANNEL 500V - 2.5鈩?- 3A DPAK/IPAK
Zener-Protected MDmesh鈩ower MOSFET
TYPE
STD3NM50
STD3NM50-1
s
s
s
s
V
DSS
500V
500V
R
DS(on)
<3
鈩?/div>
<3
鈩?/div>
I
D
3A
3A
s
s
TYPICAL R
DS
(on) = 2.5
鈩?/div>
HIGH dv/dt AND AVALANCHE CAPABILITIES
IMPROVED ESD CAPABILITY
LOW INPUT CAPACITANCE AND GATE
CHARGE
LOW GATE INPUT RESISTANCE
TIGHT PROCESS CONTROL AND HIGH
MANUFACTORING YIELDS
3
1
2
1
3
DPAK
TO-252
IPAK
TO-251
DESCRIPTION
The MDmesh鈩?is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company鈥檚 PowerMESH鈩?horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company鈥檚 proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar completition鈥檚 products.
APPLICATIONS
The MDmesh鈩?family is very suitable for increase
the power density of high voltage converters allow-
ing system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
V
ESD(G-S)
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Gate source ESD(HBM-C=100pF, R=15K鈩?
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM
Value
500
500
鹵30
3
1.89
12
46
4
0.37
15
鈥?5 to 150
150
(1)I
SD
<3A, di/dt<400A/碌s, V
DD
<V
(BR)DSS
, T
J
<T
JMAX
Unit
V
V
V
A
A
A
W
KV
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
April 2003
1/10

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