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STD3NC60-1 Datasheet

  • STD3NC60-1

  • N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowerMesh⑩II MOS...

  • 462.64KB

  • 10頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STD3NC60
STD3NC60-1
N-CHANNEL 600V - 1.8鈩?- 3.2A DPAK / IPAK
PowerMesh鈩I MOSFET
TYPE
STD3NC60
STD3NC60-1
s
s
s
s
s
s
V
DSS
600V
600V
R
DS(on)
< 2.2鈩?/div>
< 2.2鈩?/div>
I
D
3.2A
3.2A
TYPICAL R
DS
(on) = 1.8鈩?/div>
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
ADD SUFFIX 鈥淭4鈥?FOR ORDERING IN TAPE &
REEL (SMD PACKAGE)
3
1
DPAK
No Suffix
1
3
2
IPAK
(Suffix鈥?1鈥?
DESCRIPTION
The PowerMESH
鈩?/div>
II is the evolution of the first
generation of MESH OVERLAY
鈩?
The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SWITH MODE POWER SUPPLIES (SMPS)
s
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVERS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
( )
P
TOT
dv/dt(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
600
600
鹵30
3.2
2
12.8
50
0.4
3.5
鈥?5 to 150
150
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
(1)I
SD
鈮?.2A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX.
August 2002
1/10

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