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- 30A TO-252

STripFET鈩?POWER MOSFET

TYPE

STD30NE06L

s

V

DSS

60 V

R

DS(o n)

< 0.03

鈩?/div>

I

D

30 A

s

TYPICAL R

DS(on)

= 0.025

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100

o

C

APPLICATION ORIENTED

CHARACTERIZATION

ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE

& REEL

3

1

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique 鈥漇ingle Feature

Size鈩⑩€?strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

DPAK

TO-252

(Suffix 鈥漈4鈥?

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

V

DS

V

DGR

V

GS

I

D

I

D

I

DM

(

鈥?/div>

)

P

tot

Parameter

Drain-source Voltage (V

GS

= 0)

Drain- gate Voltage (R

GS

= 20 k鈩?

G ate-source Voltage

Drain Current (continuous) at T

c

= 25

o

C

Drain Current (continuous) at T

c

= 100 C

Drain Current (pulsed)

T otal Dissipation at T

c

= 25

o

C

Derating Factor

dv/ dt (

1

) Peak Diode Recovery voltage slope

T

st g

T

j

Storage Temperature

Max. Operating Junction Temperature

o

Value

60

鹵

20

30

21

120

55

0.37

7

-65 to 175

175

(

1

) I

SD

鈮?0A,

di/dt

鈮?/div>

300 A/碌s, V

DD

鈮?/div>

V

(BR)DSS

, Tj

鈮?/div>

T

JMAX

Unit

V

A

W

W /

o

C

V/ns

o

C

(鈥? Pulse width limited by safe operating area

May 1999

1/8

標準包裝
3,000
類別
分離式半導體產(chǎn)品
家庭
FET - 單
系列
STripFET™
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
30A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
28 毫歐 @ 15A，10V
Id 時的 Vgs(th)（最大）
2.5V @ 250µA
閘電荷(Qg) @ Vgs
41nC @ 5V
輸入電容 (Ciss) @ Vds
2370pF @ 25V
功率 - 最大
55W
安裝類型
表面貼裝
封裝/外殼
TO-252-3，DPak（2 引線+接片），SC-63
供應商設備封裝
D-Pak
包裝
管件

STD30NE06L相關型號PDF文件下載

型號

版本

描述

廠商

下載
STD32

英文版

Fuse

ETC

STD32
STD320

英文版

Thyristor-Diode Modules, Diode-Thyristor Modules

SIRECTIFIER

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STD350

英文版

This axial leaded strap product is designed to provide relia...

STD350
STD361

英文版

NPN Silicon Transistor

AUK

STD361
STD302S

英文版

N-Channel Logic Level E nhancement Mode Field Effect Transis...

SAMHOP

STD302S
STD3N25

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N25
STD3N25

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRON...

STD3N25
STD3N30

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N30
STD3N30

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRON...

STD3N30
STD3055L

英文版

N-Channel Logic Level E nhancement Mode F ield E ffect Trans...

SAMHOP

STD3055L
STD3055L

英文版

N-Channel Logic Level E nhancement Mode F ield E ffect Trans...

SAMHOP [Sa...

STD3055L
STD3N30L

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3N30L
STD3N30L

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRON...

STD3N30L
STD3NA50

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STD3NA50
STD3NA50

英文版

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STMICROELECTRON...

STD3NA50
STD3NB30

英文版

N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET

STD3NB30
STD3NB30

英文版

N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET

STMICROELECTRON...

STD3NB30
STD3NB50

英文版

N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

STD3NB50
STD3NB50

英文版

N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET

STMICROELECTRON...

STD3NB50
STD3NC50

英文版

N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOS...

STD3NC50

STD30NE06L Datasheet

PDF預覽

STD30NE06L 產(chǎn)品屬性

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STD30NE06L Datasheet

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