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STD16NF06L-1 Datasheet

  • STD16NF06L-1

  • N-CHANNEL 60V - 0.060 - 24A DPAK/IPAK STripFET II POWER MOSF...

  • 348.11KB

  • 11頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 60V - 0.060
鈩?/div>
- 24A DPAK/IPAK
STripFET鈩?II POWER MOSFET
Table 1: General Features
TYPE
STD16NF06L
鈻?/div>
鈻?/div>
鈻?/div>
STD16NF06L
Figure 1:Package
R
DS(on)
< 0.070
鈩?/div>
I
D
24 A
V
DSS
60 V
鈻?/div>
TYPICAL R
DS
(on) = 0.060
鈩?/div>
LOGIC LEVEL DEVICE
THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX 鈥?1")
SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX 鈥淭4")
3
2
1
IPAK
TO-251
(Suffix 鈥?1鈥?
DPAK
TO-252
(Suffix 鈥淭4鈥?
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility
APPLICATIONS
鈻?/div>
SWITCHING APPLICATIONS
Figure 2: Internal Schematic Diagram
Table 2:
Order Codes
SALES TYPE
STD16NF06LT4
STD16NF06L-1
MARKING
D16NF06L
D16NF06L
PACKAGE
TO-252
TO-251
PACKAGING
TAPE & REEL
TUBE
Table 3:
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(鈥?
P
tot
dv/dt
(1)
E
AS (2)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
Operating Junction Temperature
Value
60
60
鹵 18
24
17
96
40
0.27
11.5
200
-55 to 175
(1) I
SD
鈮?6A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 20A, V
DD
= 48V
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(鈥?
Pulse width limited by safe operating area.
March 2005
Rev.
3.0
1/11

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