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- 80A TO-220/D

2

PAK/I

2

PAK

STripFET鈩?II POWER MOSFET

TYPE

STP80NF75L

STB80NF75L

STB80NF75L-1

s

V

DSS

75 V

R

DS(on)

<0.01

鈩?/div>

<0.01

鈩?/div>

<0.01

鈩?/div>

I

D

80 A

3

1

3

12

TYPICAL R

DS

(on) = 0.008

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW THRESHOLD DRIVE

D

2

PAK

TO-263

I

2

PAK

TO-262

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size鈩?quot;

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

HIGH CURRENT, HIGH SWITCHING SPEED

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

DC-DC & DC-AC CONVERTERS

s

SOLENOID AND RELAY DRIVERS

3

1

2

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

V

DS

V

DGR

V

GS

I

D

(鈥?

I

D

I

DM

(鈥⑩€?

P

tot

dv/dt

(1)

E

AS (2)

T

stg

T

j

Parameter

Drain-source Voltage (V

GS

= 0)

Drain-gate Voltage (R

GS

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

C

= 25擄C

Drain Current (continuos) at T

C

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

C

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

Max. Operating Junction Temperature

Value

75

鹵 16

80

320

300

2

12

930

-55 to 175

(1) I

SD

鈮?0A,

di/dt

鈮?60A/碌s,

V

DD

鈮?/div>

V

(BR)DSS

, T

j

鈮?/div>

T

JMAX

(2) Starting T

j

= 25

o

C, I

D

= 40A, V

DD

= 40V

Unit

V

A

W

W/擄C

V/ns

mJ

擄C

(

鈥?/div>

)Current Limited by Package

(鈥⑩€?

Pulse width limited by safe operating area.

November 2001

.

1/11

型號

版本

描述

廠商

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STB80NF75L-1 Datasheet

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