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STB80NF55L-06 Datasheet

  • STB80NF55L-06

  • N - CHANNEL 55V - 0.005 ohm - 80A D2PAK STripFET POWER MOSFE...

  • 8頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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廬
STB80NF55L-06
N - CHANNEL 55V - 0.005
鈩?/div>
- 80A D
2
PAK
STripFET鈩?POWER MOSFET
TYPE
STB80NF55L-06
s
s
s
s
V
DSS
55 V
R
DS( on )
< 0.0065
鈩?/div>
I
D
80 A
TYPICAL R
DS(on)
= 0.005
鈩?/div>
LOW THRESHOLD DRIVE
LOGIC LEVEL DEVICE
ADD SUFFIX 鈥漈4鈥?FOR ORDERING IN TAPE
& REEL
3
1
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique 鈥漇ingle Feature
Size
鈩?/div>
鈥?strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore
a
remarkable
manufacturing
reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SPEED SWITCHING
s
SOLENOID AND RELAY DRIVERS
s
MOTOR CONTROL, AUDIO AMPLIFIERS
s
DC-DC & DC-AC CONVERTERS
D
2
PAK
TO-263
(Suffix 鈥漈4鈥?
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
鈥?
P
tot
E
AS
(
1
)
T
st g
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k鈩?
G ate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100 C
Drain Current (pulsed)
T otal Dissipation at T
c
= 25
o
C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
o
Value
55
55
鹵
20
80
57
320
210
1.4
1
-65 to 175
175
(
1
)
starting T
j
= 25 C, I
D
=40A , V
DD
= 30V
o
Unit
V
V
V
A
A
A
W
W /
o
C
J
o
o
C
C
(鈥? Pulse width limited by safe operating area
October 1999
1/8

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