STB80NE03L-06-1 Datasheet

IC型號(hào)：
STB80NE03L-06-1
PDF描述：
N-CHANNEL 30V - 0.005ohm - 80A D2PAK / I2PAK STripFET⑩ POWE...
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STB80NE03L-06

STB80NE03L-06-1

N-CHANNEL 30V - 0.005鈩?- 80A D

PAK / I

PAK

STripFET鈩?POWER MOSFET

TYPE

STB80NE03L-06

STB80NE03L-06-1

DSS

30 V

DS(on)

< 0.006

鈩?/div>

< 0.006

鈩?/div>

80 A

TYPICAL R

(on) = 0.005

鈩?/div>

EXCEPTIONAL dv/dt CAPABILITY

LOW GATE CHARGE 100擄C

100% AVALANCHE TESTED

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronics unique 鈥淪ingle Feature

Size鈩⑩€?strip-based process. The resulting transis-

tor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL,AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

DGR

( )

TOT

dv/dt (1)

stg

Parameter

Drain-source Voltage (V

= 0)

Drain-gate Voltage (R

= 20 k鈩?

Gate- source Voltage

Drain Current (continuos) at T

= 25擄C

Drain Current (continuos) at T

= 100擄C

Drain Current (pulsed)

Total Dissipation at T

= 25擄C

Derating Factor

Peak Diode Recovery voltage slope

Storage Temperature

Max. Operating Junction Temperature

Value

鹵 20

320

150

鈥?55 to 175

(1) I

鈮?04A,

di/dt

鈮?00A/碌s,

鈮?/div>

(BR)DSS

, T

鈮?/div>

JMAX.

Unit

W/擄C

V/ns

擄C

(

) Pulse width limited by safe operating area

February 2003

1/9

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