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STB5NC90Z-1 Datasheet

  • STB5NC90Z-1

  • N-CHANNEL 900V - 2.1ohm - 4.6A TO-220/FP/DPAK/IPAK Zener...

  • 517.18KB

  • 13頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP5NC90Z - STP5NC90ZFP
STB5NC90Z - STB5NC90Z-1
N-CHANNEL 900V - 2.1鈩?- 4.6A TO-220/FP/D虜PAK/I虜PAK
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STP5NC90Z/FP
STB5NC90Z/-1
s
s
V
DSS
900V
900V
R
DS(on)
< 2.5鈩?/div>
< 2.5鈩?/div>
I
D
4.6 A
4.6 A
1
3
s
s
s
TYPICAL R
DS
(on) = 2.1鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D虜PAK
TO-220
3
1
2
TO-220FP
12
3
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I虜PAK
(Tabless TO-220)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current (*)
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
鈥?5 to 150
150
4.6
2.9
18
125
1
鹵50
3
3
2000
Value
STP(B)5NC90Z(-1)
900
900
鹵 25
4.6(*)
2.9(*)
18
40
0.32
STP5NC90ZFP
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
V
擄C
擄C
Unit
(鈥?Pulse width limited by safe operating area
December 2002
(1)I
SD
鈮?.6A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(*)
.
Limited only by maximum temperature allowed
1/13

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