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STB4NC80Z-1 Datasheet

  • STB4NC80Z-1

  • N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Pro...

  • 527.55KB

  • 13頁

  • STMICROELECTRONICS   STMICROELECTRONICS

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STP4NC80Z - STP4NC80ZFP
STB4NC80Z - STB4NC80Z-1
N-CHANNEL 800V - 2.4鈩?- 4A TO-220/FP/D
2
PAK/I
2
PAK
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STP4NC80Z/FP
STB4NC80Z/-1
s
s
V
DSS
800V
800V
R
DS(on)
< 2.8
鈩?/div>
< 2.8
鈩?/div>
I
D
4A
4A
1
3
s
s
s
TYPICAL R
DS
(on) = 2.4
鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY
GATE-TO- SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
D
2
PAK
1
3
2
TO-220
TO-220FP
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
s
I PAK
(Tabless TO-220)
2
12
3
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
I
GS
V
ESD(G-S)
dv/dt(1)
V
ISO
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Insulation Winthstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
--
鈥?5 to 150
150
4
2.5
16
100
0.8
鹵50
2.5
3
2000
Value
STP(B)4NC80Z(-1)
800
800
鹵 25
4(*)
2.5(*)
16(*)
35
0.28
STP4NC80ZFP
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
V
擄C
擄C
Unit
(鈥?Pulse width limited by safe operating area
December 2002
(1)I
SD
鈮?A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
.
(*)Pulse width Limited by maximum temperature allowed
1/13

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