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STB3NC90Z Datasheet

  • STB3NC90Z

  • N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowerMESH...

  • 9頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB3NC90Z
N-CHANNEL 900V - 3.2鈩?- 3.5A D
2
PAK
Zener-Protected PowerMESH鈩II MOSFET
TYPE
STB3NC90
s
s
V
DSS
900V
R
DS(on)
< 3.5鈩?/div>
I
D
3.5 A
s
s
s
TYPICAL R
DS
(on) = 3.2鈩?/div>
EXTREMELY HIGH dv/dt AND CAPABILITY GATE
TO - SOURCE ZENER DIODES
100% AVALANCHE TESTED
VERY LOW GATE INPUT RESISTANCE
GATE CHARGE MINIMIZED
3
1
D
2
PAK
DESCRIPTION
The third generation of MESH OVERLAY鈩?Power
MOSFETs for very high voltage exhibits unsurpassed
on-resistance per unit area while integrating back-to-
back Zener diodes between gate and source. Such ar-
rangement gives extra ESD capability with higher rug-
gedness performance as requested by a large variety
of single-switch applications.
APPLICATIONS
s
SINGLE-ENDED SMPS IN MONITORS,
COMPUTER AND INDUSTRIAL APPLICATION
s
WELDING EQUIPMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
q
)
P
TOT
I
GS
V
ESD(G-S)
dv/dt
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuos) at T
C
= 25擄C
Drain Current (continuos) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Gate-source Current (*)
Gate source ESD(HBM-C=100pF, R=15K鈩?
Peak Diode Recovery voltage slope
Storage Temperature
Max. Operating Junction Temperature
Value
900
900
鹵 25
3.5
2.2
14
100
0.8
鹵50
2.5
3
鈥?5 to 150
150
(1)I
SD
鈮?.5A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(*)
.
Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/擄C
mA
KV
V/ns
擄C
擄C
(鈥?Pulse width limited by safe operating area
May 2001
1/9

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