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STB140NF75-1 Datasheet

  • STB140NF75-1

  • N-CHANNEL 75V - 0.0065 ohm -120A DPAK/IPAK/TO-220 STripF...

  • 523.65KB

  • 14頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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N-CHANNEL 75V - 0.0065
鈩?/div>
-120A D虜PAK/I虜PAK/TO-220
STripFET鈩?II POWER MOSFET
AUTOMOTIVE SPECIFIC
TYPE
STB140NF75
STP140NF75
STB140NF75-1
s
s
STB140NF75 STP140NF75
STB140NF75-1
V
DSS
75 V
75 V
75 V
R
DS(on)
<0.0075
鈩?/div>
<0.0075
鈩?/div>
<0.0075
鈩?/div>
I
D
120 A
(**)
120 A
(**)
120 A
(**)
3
1
3
12
TYPICAL R
DS
(on) = 0.0065
鈩?/div>
SURFACE-MOUNTING D
虜
PAK (TO-263)
POWER PACKAGE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size鈩?quot;
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
s
HIGH CURRENT, HIGH SWITCHING SPEED
s
SOLENOID AND RELAY DRIVERS
s
AUTOMOTIVE 42V BATTERY DRIVERS
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
3
1
2
I
2
PAK
TO-262
TO-220
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STB140NF75T4
STP140NF75
STB140NF75-1
MARKING
B140NF75
P140NF75
B140NF75
PACKAGE
D
2
PAK
TO-220
I
2
PAK
PACKAGING
TAPE & REEL
TUBE
TUBE
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V
DS
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
V
DGR
V
GS
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
I
D
(**)
Drain Current (continuous) at T
C
= 100擄C
I
D
I
DM
(鈥?
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25擄C
Derating Factor
(1)
Peak Diode Recovery voltage slope
dv/dt
(2)
E
AS
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Operating Junction Temperature
(鈥?
Pulse width limited by safe operating area.
(**) Current Limited by Package
Value
75
75
鹵 20
120
100
480
310
2.08
10
750
-55 to 175
Unit
V
V
V
A
A
A
W
W/擄C
V/ns
mJ
擄C
(1) I
SD
鈮?20A,
di/dt
鈮?00A/碌s,
V
DD
鈮?/div>
V
(BR)DSS
, T
j
鈮?/div>
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 60 A, V
DD
= 30V
December 2002
1/14

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