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STB120NH03LT4 Datasheet

  • STB120NH03LT4

  • N-CHANNEL 30V - 0.005 W - 60A D2PAK STripFET III POWER MOSFE...

  • 11頁(yè)

  • STMICROELECTRONICS   STMICROELECTRONICS

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STB120NH03L
N-CHANNEL 30V - 0.005
鈩?/div>
- 60A D
2
PAK
STripFET鈩?III POWER MOSFET FOR DC-DC CONVERSION
TYPE
STB120NH03L
s
s
s
s
s
s
V
DSS
30 V
R
DS(on)
<0.0055
鈩?/div>
I
D
60 A(#)
TYPICAL R
DS
(on) = 0.005
鈩?/div>
@ 10 V
R
DS(ON)
* Qg INDUSTRY鈥檚 BENCHMARK
CONDUCTION LOSSES REDUCED
SWITCHING LOSSES REDUCED
LOW THRESHOLD DEVICE
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX 鈥淭4鈥?
3
1
D
2
PAK
TO-263
(Suffix 鈥淭4鈥?
DESCRIPTION
The STB120NH03L utilizes the latest advanced design
rules of ST鈥檚 proprietary STripFET鈩?technology. It is ideal
in high performance DC-DC converter applications where
efficiency is to be achieved at very high output currents.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC-DC
CONVERTERS
O
rdering Information
SALES TYPE
STB120NH03LT4
MARKING
B120NH03L
PACKAGE
TO-252
PACKAGING
TAPE & REEL
ABSOLUTE MAXIMUM RATINGS
s
Symbol
V
DS
V
DGR
V
GS
I
D
(#)
I
D
(#)
I
DM
(
鈥?/div>
)
P
tot
E
AS
(1)
T
stg
T
j
Parameter
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k鈩?
Gate- source Voltage
Drain Current (continuous) at T
C
= 25擄C
Drain Current (continuous) at T
C
= 100擄C
Drain Current (pulsed)
Total Dissipation at T
C
= 25擄C
Derating Factor
Single Pulse Avalanche Energy
Storage Temperature
Max. Operating Junction Temperature
Value
30
30
鹵 20
60
60
240
115
0.77
700
-55 to 175
(1) Starting T
j
= 25
o
C, I
D
= 30A, V
DD
= 15V
Unit
V
V
V
A
A
A
W
W/擄C
mJ
擄C
(鈥? Pulse width limited by safe operating area.
(#) Value limited by wire bonding
October 2003
1/11

STB120NH03LT4 產(chǎn)品屬性

  • STMicroelectronics

  • MOSFET

  • N-Channel

  • 30 V

  • +/- 20 V

  • 9 A

  • 0.0105 Ohms

  • Single

  • + 175 C

  • SMD/SMT

  • D2PAK

  • Reel

  • 23 ns

  • - 55 C

  • 110 W

  • 95 ns

  • 1000

  • 48 ns

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