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ST93CS46B6 Datasheet

  • ST93CS46B6

  • Microwire Serial EEPROM

  • 16頁

  • ETC

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ST93CS46
ST93CS47
1K (64 x 16) SERIAL MICROWIRE EEPROM
NOT FOR NEW DESIGN
1 MILLION ERASE/WRITE CYCLES, with
40 YEARS DATA RETENTION
SELF-TIMED PROGRAMMING CYCLE with
AUTO-ERASE
READY/BUSY SIGNAL DURING
PROGRAMMING
SINGLE SUPPLY VOLTAGE
鈥?3V to 5.5V for the ST93CS46
鈥?2.5V to 5.5V for the ST93CS47
USER DEFINED WRITE PROTECTED AREA
PAGE WRITE MODE (4 WORDS)
SEQUENTIAL READ OPERATION
5ms TYPICAL PROGRAMMING TIME
ST93CS46 and ST93CS47 are replaced by
the M93S46
8
1
PSDIP8 (B)
0.4mm Frame
8
1
SO8 (M)
150mil Width
Figure 1. Logic Diagram
DESCRIPTION
The ST93CS46 and ST93CS47 are 1K bit Electri-
cally Erasable Programmable Memory (EEPROM)
fabricated with SGS-THOMSON鈥檚 High Endurance
Single Polysilicon CMOS technology. The memory
is accessed through a serial input D and output Q.
The 1K bit memory is organized as 64 x 16 bit
words.The memory is accessed by a set of instruc-
tions which include Read, Write, Page Write, Write
All and instructions used to set the memory protec-
tion. A Read instruction loads the address of the
first word to be read into an internal address
pointer.
Table 1. Signal Names
S
D
Q
C
PRE
W
V
CC
V
SS
Chip Select Input
Serial Data Input
Serial Data Output
Serial Clock
Protect Enable
Write Enable
Supply Voltage
Ground
VCC
D
C
S
PRE
W
ST93CS46
ST93CS47
Q
VSS
AI00884B
June 1997
This is information on a product still in production bu t not recommended for new de signs.
1/16

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