ST14C02C
Memory Card IC
2 Kbit (256 x 8) Serial I2C Bus EEPROM
s
s
s
s
s
Single Supply Voltage (3 V to 5.5 V)
Two Wire I
2
C Serial Interface
BYTE and MULTBYTE WRITE (up to 4 Bytes)
PAGE WRITE (up to 8 Bytes)
BYTE, RANDOM and SEQUENTIAL READ
Modes
Self-Timed Programming Cycle
2
2
2
2
s
s
s
s
s
Automatic Address Incrementing
Enhanced ESD/Latch-Up Behavior
1 Million Erase/Write Cycles (minimum)
10 Year Data Retention (minimum)
Micromodule (D15)
Micromodule (D20)
DESCRIPTION
This device is an electrically erasable programma-
ble memory (EEPROM) fabricated with
STMicroelectronics鈥檚 High Endurance, Advanced
Polysilicon, CMOS technology. This guarantees
an endurance typically well above one million
Erase/Write cycles, with a data retention of 10
years. The memory operates with a power supply
as low as 3 V.
The device is available in wafer form (either sawn
or unsawn) and in micromodule form (on film).
The memory is compatible with the I
2
C standard.
This is a two wire serial interface that uses a bi-di-
rectional data bus and serial clock. The memory
carries a built-in 7-bit unique Device Type Identifi-
er code (1010000) in accordance with the I
2
C bus
definition. Only one memory can be attached to
each I
2
C bus.
Wafer
Figure 1. Logic Diagram
VCC
SCL
Table 1. Signal Names
SDA
Serial Data/Address Input/
Output
Serial Clock
Write Mode
Supply Voltage
Ground
ST14C02C
MODE
SDA
SCL
MODE
V
CC
GND
GND
AI01162
DS.ST14C02C/9811V2
1/12