DPAD SERIES
Linear Integrated Systems
FEATURES
MONOLITHIC DUAL
PICO AMPERE DIODES
Direct Replacement For SILICONIX DPAD SERIES
HIGH ON ISOLATION
20fA
EXCELLENT CAPACITANCE MATCHING
ABSOLUTE MAXIMUM RATINGS
1
@ 25 擄C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation (DPAD)
Maximum Currents
Forward Current (DPAD)
50mA
500mW
-65 to +150 擄C
-55 to +135 擄C
K1
DPAD
TO-72
BOTTOM VIEW
A1
3
5
DPAD1
TO-78
BOTTOM VIEW
C
A1
4
3
5
鈭咰
R
鈮?/div>
0.2pF
A2
K2
1
7
K2
K1
1
7
A2
SSTDPAD
SOIC
K1
K1
A1
NC
1
2
3
4
8
7
6
5
K2
K2
A2
NC
COMMON ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
BV
R
V
F
|C
R1
-C
R2
|
CHARACTERISTIC
Reverse Breakdown
Voltage
Forward Voltage
Differential Capacitance
(鈭咰
R
)
Total Reverse Capacitance
DPAD1
ALL OTHERS
DPAD1
C
rss
DPAD2,5,10,20,50,100
SSTDPAD5,50,100
SPECIFIC ELECTRICAL CHARACTERISTICS @ 25 擄C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
(SST)DPAD1
(SST)DPAD2
(SST)DPAD5
I
R
Maximum Reverse
2
Leakage Current
(SST)DPAD10
(SST)DPAD20
(SST)DPAD50
(SST)DPAD100
DPAD
2
-1
-2
-5
-10
-20
-50
-100
-50
-100
-5
pA
V
R
= -20V
SSTDPAD
2
UNITS
CONDITIONS
DPAD1
DPAD2,5,10,20,50,100
SSTDPAD5,50,100
MIN
-45
-45
-30
0.8
1.5
0.2
0.5
0.8
2.0
4.0
pF
V
R
= -5V,
f
= 1MHz
V
I
R
= -1碌A(chǔ)
I
F
= 1mA
V
R1
= V
R2
= -5V,
f
= 1MHz
TYP
MAX UNITS
CONDITIONS
Linear Integrated Systems
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