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SST39WF800B-70-4I-C2QE Datasheet

  • SST39WF800B-70-4I-C2QE

  • 8 Mbit (x16) Multi-Purpose Flash

  • 862.69KB

  • 26頁

  • SST   SST

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8 Mbit (x16) Multi-Purpose Flash
SST39WF800B
Data Sheet
FEATURES:
鈥?Organized as 512K x16
鈥?Single Voltage Read and Write Operations
鈥?1.65-1.95V
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption (typical values at 5 MHz)
鈥?Active Current: 5 mA (typical)
鈥?Standby Current: 5 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
鈥?Uniform 2 KWord sectors
鈥?Block-Erase Capability
鈥?Uniform 32 KWord blocks
鈥?Fast Read Access Time
鈥?70 ns
鈥?Latched Address and Data
鈥?Fast Erase and Word-Program
鈥?Sector-Erase Time: 36 ms (typical)
鈥?Block-Erase Time: 36 ms (typical)
鈥?Chip-Erase Time: 140 ms (typical)
鈥?Word-Program Time: 28 碌s (typical)
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?48-ball TFBGA (6mm x 8mm)
鈥?48-ball WFBGA (5mm x 6mm) Micro-Package
鈥?48-ball XFLGA (5mm x 6mm) Micro-Package
鈥?All non-Pb (lead-free) devices are RoHS compliant
PRODUCT DESCRIPTION
The SST39WF800B is a 512K x16 CMOS Multi-Purpose
Flash (MPF) manufactured with SST proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared to alternate
approaches. The SST39WF800B writes (Program or
Erase) with a 1.65-1.95V power supply. This device con-
forms to JEDEC standard pin assignments for x16 memo-
ries.
The SST39WF800B features high-performance Word-Pro-
gramming which provides a typical Word-Program time of
28 碌sec. It uses Toggle Bit or Data# Polling to detect the
completion of the Program or Erase operation. On-chip
hardware and software data protection schemes protects
against inadvertent writes. Designed, manufactured, and
tested for a wide spectrum of applications, the
SST39WF800B is offered with a guaranteed typical endur-
ance of 100,000 cycles. Data retention is rated at greater
than 100 years.
The SST39WF800B is suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. It significantly improves perfor-
mance and reliability of all system applications while
lowering power consumption. It inherently uses less energy
漏2007 Silicon Storage Technology, Inc.
S71344-00-000
2/07
1
during Erase and Program than alternative flash technolo-
gies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and
time of application. For any given voltage range, Super-
Flash technology uses less current to program and has a
shorter erase time; therefore, the total energy consumed
during any Erase or Program operation is less than alterna-
tive flash technologies. These devices also improve flexibil-
ity while lowering the cost for program, data, and
configuration storage applications.
SuperFlash technology provides fixed Erase and Program
times independent of the number of Erase/Program cycles
that have occurred. Consequently, the system software or
hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39WF800B
is offered in a 48-ball TFBGA package and a 48-ball Micro-
Package. See Figure 3 and Figure 2 for pin assignments.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.

SST39WF800B-70-4I-C2QE 產(chǎn)品屬性

  • SST Serial and Parallel Flash Memory

  • 666

  • 集成電路 (IC)

  • 存儲器

  • SST39 MPF™

  • 閃存

  • FLASH

  • 8M（512K x 16）

  • 70ns

  • 并聯(lián)

  • 1.65 V ~ 1.95 V

  • -40°C ~ 85°C

  • 48-UFLGA

  • 48-XFLGA（6x4）

  • 托盤

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