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SST39VF160-70-4C-B2K Datasheet

  • SST39VF160-70-4C-B2K

  • EEPROM

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  • ETC

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16 Megabit (x16) Multi-Purpose Flash
SST39LF160 / SST39VF160
Data Sheet
FEATURES:
鈥?Organized as 1M x16
鈥?Single Voltage Read and Write Operations
- 3.0-3.6V for SST39LF160
- 2.7-3.6V for SST39VF160
鈥?Superior Reliability
- Endurance: 100,000 Cycles (typical)
- Greater than 100 years Data Retention
鈥?Low Power Consumption:
- Active Current: 15 mA (typical)
- Standby Current: 4 碌A(chǔ) (typical)
- Auto Low Power Mode: 4 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
- Uniform 2 KWord sectors
鈥?Block-Erase Capability
- Uniform 32 KWord blocks
鈥?Fast Read Access Time:
- 55 ns for SST39LF160
- 70 and 90 ns for SST39VF160
鈥?Latched Address and Data
鈥?Fast Erase and Word-Program:
- Sector-Erase Time: 18 ms (typical)
- Block-Erase Time: 18 ms (typical)
- Chip-Erase Time: 70 ms (typical)
- Word-Program Time: 14 碌s (typical)
- Chip Rewrite Time:
15 seconds (typical) for SST39LF/VF160
鈥?Automatic Write Timing
- Internal V
PP
Generation
鈥?End-of-Write Detection
- Toggle Bit
- Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
- Flash EEPROM Pinouts and command sets
鈥?Packages Available
- 48-Pin TSOP (12mm x 20mm)
- 48-Ball TFBGA (8mm x 10mm and 6mm x 8mm)
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3
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5
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PRODUCT DESCRIPTION
The SST39LF/VF160 devices are 1M x16 CMOS Multi-
Purpose Flash (MPF) manufactured with SST鈥檚 propri-
etary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick oxide tunneling
injector attain better reliability and manufacturability com-
pared with alternate approaches. The SST39LF160 write
(Program or Erase) with a 3.0-3.6V power supply. The
SST39VF160 write (Program or Erase) with a 2.7-3.6V
power supply. These devices conform to JEDEC stan-
dard pinouts for x16 memories.
Featuring high performance Word-Program, the
SST39LF/VF160 devices provide a typical Word-Pro-
gram time of 14 碌sec.These devices use Toggle Bit or
Data# Polling to indicate the completion of Program
operation. To protect against inadvertent write, they have
on-chip hardware and Software Data Protection
schemes. Designed, manufactured, and tested for a wide
spectrum of applications, these devices are offered with
a guaranteed endurance of 10,000 cycles. Data retention
is rated at greater than 100 years.
The SST39LF/VF160 devices are suited for applications
that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system
applications, they significantly improve performance and
reliability, while lowering power consumption. They inher-
ently use less energy during Erase and Program than
alternative flash technologies. The total energy con-
漏 2000 Silicon Storage Technology, Inc.
399-2 11/00
S71145
sumed is a function of the applied voltage, current, and
time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and
has a shorter erase time, the total energy consumed
during any Erase or Program operation is less than
alternative flash technologies. These devices also im-
prove flexibility while lowering the cost for program, data,
and configuration storage applications.
The SuperFlash technology provides fixed Erase and
Program times, independent of the number of Erase/
Program cycles that have occurred. Therefore the sys-
tem software or hardware does not have to be modified or
de-rated as is necessary with alternative flash technolo-
gies, whose Erase and Program times increase with
accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the
SST39LF/VF160 are offered in 48-pin TSOP and 48-ball
TFBGA packages. See Figures 1 and 2 for pinouts.
Device Operation
Commands are used to initiate the memory operation
functions of the device. Commands are written to the
device using standard microprocessor write sequences.
A command is written by asserting WE# low while keeping
CE# low. The address bus is latched on the falling edge
of WE# or CE#, whichever occurs last. The data bus is
latched on the rising edge of WE# or CE#, whichever
occurs first.
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc. MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
1

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