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SST39VF088-70-4C-EKE Datasheet

  • SST39VF088-70-4C-EKE

  • 8 Mbit (x8) Multi-Purpose Flash

  • 22頁

  • SST   SST

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8 Mbit (x8) Multi-Purpose Flash
SST39VF088
SST39VF0882.7V 8Mb (x8) MPF memory
Preliminary Specifications
FEATURES:
鈥?Organized as 1M x8
鈥?Single Voltage Read and Write Operations
鈥?2.7-3.6V
鈥?Superior Reliability
鈥?Endurance: 100,000 Cycles (typical)
鈥?Greater than 100 years Data Retention
鈥?Low Power Consumption (typical values at 5 MHz)
鈥?Active Current: 12 mA (typical)
鈥?Standby Current: 4 碌A(chǔ) (typical)
鈥?Sector-Erase Capability
鈥?Uniform 4 KByte sectors
鈥?Block-Erase Capability
鈥?Uniform 64 KByte blocks
鈥?Fast Read Access Time:
鈥?70 and 90 ns
鈥?Latched Address and Data
鈥?Fast Erase and Byte-Program
鈥?Sector-Erase Time: 18 ms (typical)
鈥?Block-Erase Time: 18 ms (typical)
鈥?Chip-Erase Time: 70 ms (typical)
鈥?Byte-Program Time: 14 碌s (typical)
鈥?Chip Rewrite Time: 15 seconds (typical)
鈥?Automatic Write Timing
鈥?Internal V
PP
Generation
鈥?End-of-Write Detection
鈥?Toggle Bit
鈥?Data# Polling
鈥?CMOS I/O Compatibility
鈥?JEDEC Standard
鈥?Flash EEPROM Pinouts and command sets
鈥?Packages Available
鈥?48-lead TSOP (12mm x 20mm)
PRODUCT DESCRIPTION
The SST39VF088 device is a 1M x8 CMOS Multi-Purpose
Flash (MPF) manufactured with SST鈥檚 proprietary, high
performance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST39VF088 writes (Program or Erase)
with a 2.7-3.6V power supply. It conforms to JEDEC stan-
dard pinouts for x8 memories.
Featuring high performance Byte-Program, the
SST39VF088 device provides a typical Byte-Program time
of 14 碌sec. The devices use Toggle Bit or Data# Polling to
indicate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The SST39VF088 device is suited for applications that
require convenient and economical updating of program,
configuration, or data memory. For all system applications,
they significantly improve performance and reliability, while
lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash
technologies. The total energy consumed is a function of
the applied voltage, current, and time of application. Since
漏2003 Silicon Storage Technology, Inc.
S71227-04-000
11/03
1
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MPF is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
for any given voltage range, the SuperFlash technology
uses less current to program and has a shorter erase time,
the total energy consumed during any Erase or Program
operation is less than alternative flash technologies. They
also improve flexibility while lowering the cost for program,
data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet high density, surface mount requirements, the
SST39VF088 is offered in 48-lead TSOP packaging. See
Figure 1 for pin assignments.

SST39VF088-70-4C-EKE 產(chǎn)品屬性

  • Microchip

  • 閃存

  • 8 bit

  • NAND

  • 8 Mbit

  • Sectored

  • LPC

  • 70 ns

  • 3.6 V

  • 2.7 V

  • 15 mA

  • + 70 C

  • SMD/SMT

  • TSOP-48

  • Tray

  • 1 MB x 8

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